Epi Deposition Equipment &
Reactor Types

Applied Materials Centura 5200

• Epi Thickness: .01um to 150um
• Single Wafer Processing
• Silicon Source Gas: TCS
• Wafer Diameters: 150mm, & 200mm
• Dopant Species: Boron, Phosphorus, Arsenic
• Epi Resistivity: 0.01 Ohm-cm to Intrinsic Resistivity
• Layer Uniformities: < 2.0% / 4.0%
• Multi-Layer / Ramped Layer