Silicon Epi Technology

GlobiTech produces a wide variety of silicon epi products.

• Diameter – 150mm, 200mm
• Epi Thickness – 0.1um to 150um
• Epi Resistivity – 0.01 to 1000 Ohm-cm
• Layer Thickness/Resistivity Uniformities – Typical:<2% / 4%
• Surface Defects – <20 @ 0.2um LSE
• Dopant Source – Boron, Phosphorus, or Arsenic

GlobiTech has access to a broad range of substrate types from multiple silicon wafer suppliers.

• 150mm, and 200mm wafers.
• Heavily Doped Arsenic
• Red Phosphorus
• Antimony
• Boron